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| ODU IGBT MODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4-6.5 Unit in mm 2-M4 19.5 27.5 EAT RES FEATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E 110 C G 46.75 E 13 37+1 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 360Arms max. (2)Recommended Value 1.18/7.35N.m(12/75kgf.cm) CHARACTERISTICS Item Collector Emitter Cut-Off Current I CES mA 2.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.9 3.6 IC=1,200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =1,200mA Input Capacitance Cies nF 112 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.6 1.6 VCC=600V ms Turn On Time ton 0.8 2.2 RL=0.5W Switching Times Fall Time tf 0.45 0.55 RG=3.3W (4) 1.4 1.6 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.7 IF=1,200A,VGE=0V Reverse Recovery Time trr 0.5 IF=1,200A,VGE=-10V, di/dt=1200A/ms ms Junction to case Rth(j-c) C/W 0.022 Thermal Impedance IGBT 0.05 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. w w (Tc=25C ) w t a .D Symbol S a Unit W C C VRMS N.m (kgf.cm) e h A A V V U t4 e G TERMINALS .c C m o (8) 44 MBN1200GS12AW 1,200 20 1,200 2,400 1,200 2,400 5,600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/7.84(80) 2.94(30) 130 (1) (2) (3) (3)Recommended Value 2.45N.m(25kgf.cm) Min. Typ. Max. Test Conditions w w w .D a aS t ee h 4U t om .c PDE-N1200GS12AW-0 2400 14V VGE=15V13V12V Tc=25C TYPICAL 2400 14V VGE=15V13V12V Tc=125C TYPICAL 2000 2000 Collector Current, Ic (A) Collector Current, Ic (A) 1600 11V 1200 Pc=5600W 1600 11V 1200 600 10V 400 9V 0 0 2 4 6 8 10 800 10V 400 9V 0 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 10 Tc=25C Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 10 Tc=125C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) 8 8 6 6 4 Ic=2400A Ic=1200A 4 Ic=2400A Ic=1200A 2 2 00 5 10 15 20 00 5 10 15 20 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage TYPICAL VGE=0 Tc=25C Tc=125C 2400 TYPICAL 20 Vcc=600V Ic =1200A Tc=25C 2000 Gate to Emitter Voltage, VGE (V) 15 Forward Current, IF (A) 1600 1200 10 800 5 400 0 0 2000 4000 6000 8000 10000 0 0 1 2 3 4 5 Gate Charge, QG (nc) Gate charge characteristics Forward Voltage, VF (V) Forward voltage of free-wheeling diode PDE-N1200GS12AW TYPICAL 1.5 Vcc=600V VGE=15V RG=3.3W TC=25C Resistive Load 1.0 ton tr 0.5 tf toff 10 VCC=600V VGE=15V IC=1200A TC=25C Resistive Load TYPICAL toff Switching Time, t (ms) Switching Time, t (ms) 1 ton tr tf 0 0 200 400 600 800 1000 1200 1400 0.1 1 10 100 Collector Current, IC (A) Switching time vs. Collector current TYPICAL 350 Vcc=600V VGE=15V RG=3.3W TC=125C Inductive Load Etoff 1000 Gate Resistance, RG (W) Switching time vs. Gate resistance TYPICAL Etoff Switching Loss, Eton,Etoff, Err (mJ/pulse) 300 Switching Loss, Eton, Etoff (mJ/pulse) 250 Eton 100 Err 200 150 10 VCC=600V VGE=15V IC =1200A TC=125C Inductive Load 1 1 10 100 100 Eton 50 0 Err 0 200 400 600 800 1000 1200 1400 Collector Current, IC (A) Switching loss vs. Collector current 10000 1 Gate Resistance, RG (W) Switching loss vs. Gate resistance 1000 Collector Current, Ic (A) VGE=15V RG=3.3W TC125C 100 Transient Thermal Impedance, Rth(j-c) (C/W) 0.1 Diode IGBT 0.01 10 0.1 0 200 400 600 800 1000 1200 1400 0.001 0.001 0.01 0.1 1 10 Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area Time, t (s) Transient thermal impedance PDE-N1200GS12AW HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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